Abstract brevetto
A semiconductor laser includes an active region that, in response to an applied pumping energy, can produce stimulated emission of radiation with a central wavelength in the far-infrared region, and a confinement region suitable for confining the radiation in the active region and including at least one interface between adjacent layers capable of supporting surface plasmonic modes generated by the interaction of the interface with the radiation. The confinement region includes a wave guide layer bounded on opposite sides by a first interface and a second interface. The guide layer is equipped such that the first and second interfaces are capable of supporting plasmonic modes, respectively, and is thick enough to result in the accumulation of plasmonic modes in the vicinity J of the first and second interfaces, on the outside of the layer, and substantially a suppression of plasmonic modes, on the inside of the layer.
Titolari
Scuola Normale Superiore di PISA
Inventori
Fabio BELTRAM, Ruedeger KOEHLER, Alessandro TREDICUCCI, Harwey Edward BEERE, Alexander Giles DAVIES,Edmund Harold LINFIELD
Domanda di priorità
Numero deposito: IT2002TO00274
Data deposito: 27/03/2002
Status
Abbandonato
Famiglia brevettuale
Numero di deposito |
Data deposito |
Titolo |
Nazione deposito |
WO2003IB01080 |
24-03-2003 |
THz SEMICONDUCTOR LASER INCORPORATING A CONTROLLED PLASMON CONFINEMENT WAVEGUIDE |
Mondiale |
AT20030744952T |
24-03-2003 |
THZ-HALBLEITERLASER MIT EINEM GESTEUERTEN PLASMON-CONFINEMENT-WELLENLEITER |
Austria |
AU20030209936 |
24-03-2003 |
Thz semiconductor laser incorporating a controlled plasmon confinement waveguide |
Australia |
DE2003605910T |
24-03-2003 |
THZ-HALBLEITERLASER MIT EINEM GESTEUERTEN PLASMON-CONFINEMENT-WELLENLEITER |
Germania |
EP20030744952 |
24-03-2003 |
THz SEMICONDUCTOR LASER INCORPORATING A CONTROLLED PLASMON CONFINEMENT WAVEGUIDE |
Europeo |
JP20030579329 |
24-03-2003 |
THz semiconductor laser incorporating a controlled plasmon confinement weveguide |
Giappone |
US20040508996 |
27-09-2004 |
THz semiconductor laser incorporating a controlled plasmon confinement waveguide |
Stati Uniti |
Area tematica
Chimica, fisica, nuovi materiali e processi di lavorazione